65.0

Polla Rouf

Linköping University

Polla Rouf's research has significantly contributed to the development of advanced materials for energy-related applications. By fabricating semi-transparent SrTa2N photoanodes with a GaN underlayer grown via atomic layer deposition, they have demonstrated improved efficiency in photoelectrochemical performances. Additionally, their work on thermal ALD of In2O3 thin films using a homoleptic indium triazenide precursor and water has opened up new avenues for precise control over material composition. Rouf's research also explores the synthesis of homogeneous high-ITO content INGa1−xN films via supercycle atomic layer deposition, resolving impurities in ALD-deposited Aluminum Nitride through low-cost precursor design.

AlGaN/GaN HEMTsAtomic Layer DepositionThin Film GrowthGaN
Commercial signal 65.2
Scientific signal 64.8
Social signal 62.1
Papers 13
0 Patent-to-paper cites
130 Paper cites

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